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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package *High breakdown voltage APPLICATIONS *For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1755 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -40~150 CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.2 0.7 1.2 W UNIT V V V A A SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50mA ;IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=10mA ; VCE=30V f=1MHz;VCB=50V 40 50 MIN 300 2SC1755 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.0 0.1 0.1 200 V A A MHz 5.3 pF hFE classifications C 40-80 D 60-120 E 100-200 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1755 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2SC1755 4 |
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